Samsung 990 EVO PLUS 2TB Gen4 NVMe M.2 SSD

Read up to 7250MB/s, Write up to 6300MB/s

Samsung  |  SKU 70802  |  MPN MZ-V9S2T0BW
$319.00

In stock at Computer Lounge

Warranty and Support

Warranty: 5 Years Return to Base Warranty

Returns: 14-day hassle-free exchanges and store credits, subject to terms and conditions outlined in our Returns Policy.

Delivery and Shipping

All deliveries are signature required.

North Island: 1 – 2 working days
South Island: 2 – 3 working days

Please allow an additional 1 – 2 working days for delivery to rural addresses.

Buy Now, Pay Later & Finance Options:

Description

Performance

Up to 7,250MB/s of sequential read speed, 45% faster than the previous model.

Power Efficiency

Power efficiency enhanced by 73% for more MB/s per watt, while maintaining performance and thermal control.

Versatility

Up to 4TB expanded capacity and rapid Intelligent TurboWrite 2.0 with an enlarged TurboWrite region.

Spectacular Speed Everyday

Blast through tasks faster. The 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.

Increased Power Efficiency

Optimized efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73%, compared to the previous model, achieving the same power level and thermal control with less power consumption. Stay focused on work or play with no overheating or battery life worries.

Extra Space. Extra Speed.

Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.

Samsung Magician Software

Make your SSD work like magic. Samsung Magician software's optimization tools ensure SSD performance best fit for your unique needs. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing Innovations to Life

For decades, Samsung’s NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

Specifications

Interface PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
Application Client PCs
Weight Max 9.0g Weight
Dimension (WxHxD) Max 80.15 x Max 22.15 x Max 2.38 mm
General Feature
Application Client PCs
Capacity 2,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Form Factor M.2 (2280)
Interface PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
Dimension (WxHxD) Max 80.15 x Max 22.15 x Max 2.38 mm
Weight Max 9.0g Weight
Storage Memory Samsung V-NAND TLC
Controller Samsung in-house Controller
Cache Memory HMB(Host Memory Buffer)
Special Feature
TRIM Support Supported
S.M.A.R.T Support Supported
GC (Garbage Collection) Auto Garbage Collection Algorithm
Encryption Support AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
WWN Support Not supported
Device Sleep Mode Support Yes
Performance
Sequential Read Up to 7,250 MB/s * Performance may vary based on system hardware & configuration
Sequential Write Up to 6,300 MB/s * Performance may vary based on system hardware & configuration
Random Read (4KB, QD32) Up to 1,000,000 IOPS * Performance may vary based on system hardware & configuration
Random Write (4KB, QD32) Up to 1,350,000 IOPS * Performance may vary based on system hardware & configuration
Environment
Average Power Consumption (system level) Average: Read 4.6 W / Write 4.2 W* Actual power consumption may vary depending on system hardware & configuration
Power consumption (Idle) Typical 60 mW * Actual power consumption may vary depending on system hardware & configuration
Power Consumption (Device Sleep) Typical 5 mW * Actual power consumption may vary depending on system hardware & configuration
Allowable Voltage 3.3 V ± 5 % Allowable voltage
Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)
Operating Temperature 0 - 70 ℃ Operating Temperature
Shock 1,500 G & 0.5 ms (Half sine)